MMJT350T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

PNP

Max Power Dissipation :

2.75W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

300V

Length :

6.7mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

300V

Factory Lead Time :

2 Weeks

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Number of Pins :

4

Terminal Position :

Dual

Pbfree Code :

yes

Pin Count :

4

Current Rating :

-500mA

Emitter Base Voltage (VEBO) :

5V

Terminal Form :

Gull wing

Base Part Number :

MMJT350

Width :

3.7mm

hFE Min :

30

Lead Free :

Lead Free

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

300V

Case Connection :

COLLECTOR

Height :

1.65mm

Element Configuration :

Single

ECCN Code :

EAR99

Voltage - Rated DC :

-300V

Power Dissipation :

1.4W

Power - Max :

650mW

Transition Frequency :

3MHz

Max Collector Current :

500mA

Collector Emitter Breakdown Voltage :

300V

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Peak Reflow Temperature (Cel) :

260

Published :

2006

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)