MMDT2907V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

-60V

Width :

1.2mm

Current - Collector Cutoff (Max) :

10nA ICBO

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

hFE Min :

75

Terminal Form :

Flat

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

60V

Polarity :

PNP

Number of Pins :

6

Pbfree Code :

yes

Max Collector Current :

600mA

Base Part Number :

MMDT2907V

Gain Bandwidth Product :

200MHz

Length :

1.6mm

Collector Emitter Breakdown Voltage :

60V

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

150mW

Package / Case :

SOT-563, SOT-666

Turn Off Time-Max (toff) :

100ns

Transition Frequency :

200MHz

JESD-609 Code :

e3

Published :

2005

Collector Base Voltage (VCBO) :

60V

Mount :

Surface Mount

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Frequency :

200MHz

Current Rating :

-600mA

Transistor Type :

2 PNP (Dual)

Additional Feature :

High Reliability

ECCN Code :

EAR99

Pin Count :

6

Number of Elements :

2

Radiation Hardening :

No

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Weight :

3.005049mg

Height :

600μm

REACH SVHC :

No SVHC

Max Breakdown Voltage :

60V

Element Configuration :

Dual

Turn On Time-Max (ton) :

45ns

Factory Lead Time :

19 Weeks

Max Power Dissipation :

150mW