MMBT2369ALT3G
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- Mfr.Part #
- MMBT2369ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A SOT23-3
- Stock
- 20,558
- In Stock ：
- 20,558
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 15V
- Collector Emitter Breakdown Voltage :
- 15V
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Max Power Dissipation :
- 225mW
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- Published :
- 2006
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Base Part Number :
- MMBT2369A
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 200mA
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 4.5V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 15V
- Current - Collector Cutoff (Max) :
- 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 200mA
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Datasheets
- MMBT2369ALT3G
NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2369ALT3G Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 100mA.With the emitter base voltage set at 4.5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT2369ALT3G Features
the DC current gain for this device is 20 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
MMBT2369ALT3G Applications
There are a lot of ON Semiconductor
MMBT2369ALT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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