MMBFJ202

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Power Dissipation :

350mW

Continuous Drain Current (ID) :

5.4mA

Terminal Finish :

Tin (Sn)

Current - Drain (Idss) @ Vds (Vgs=0) :

900μA @ 20V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Lead Free :

Lead Free

FET Technology :

JUNCTION

FET Type :

N-Channel

Voltage - Cutoff (VGS off) @ Id :

800mV @ 10nA

Mount :

Surface Mount

Terminal Position :

Dual

Radiation Hardening :

No

Base Part Number :

MBFJ202

REACH SVHC :

No SVHC

Number of Elements :

1

Weight :

30mg

Operating Mode :

Depletion Mode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Max Power Dissipation :

350mW

Voltage - Rated DC :

40V

JESD-609 Code :

e3

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

-40V

ECCN Code :

EAR99

Breakdown Voltage :

40V

HTS Code :

8541.21.00.95

Current Rating :

50mA

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Published :

2008

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON