MMBF170LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

60V

Height :

940μm

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.5A

Number of Elements :

1

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Pin Count :

3

Resistance :

5Ohm

Power Dissipation :

225mW

Transistor Application :

SWITCHING

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.9mm

Drain to Source Breakdown Voltage :

60V

FET Type :

N-Channel

Current Rating :

500mA

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Lead Free :

Lead Free

Nominal Vgs :

3 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 1mA

Continuous Drain Current (ID) :

500mA

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Threshold Voltage :

3V

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Published :

2004

Width :

1.3mm

JESD-609 Code :

e3

Turn-Off Delay Time :

10 ns

Number of Pins :

3

Number of Terminations :

3

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Turn On Delay Time :

10 ns

Power Dissipation-Max :

225mW Ta

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)