MMBF170LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

3 V

Transistor Element Material :

SILICON

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Power Dissipation :

225mW

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

FET Type :

N-Channel

Current Rating :

500mA

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

5Ohm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

10 ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Lead Free :

Lead Free

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Length :

2.9mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

3V @ 1mA

Drain Current-Max (Abs) (ID) :

0.5A

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Published :

2004

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

60V

Continuous Drain Current (ID) :

500mA

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Threshold Voltage :

3V

Height :

940μm

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

10 ns

Terminal Form :

Gull wing

Terminal Position :

Dual

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Width :

1.3mm

Power Dissipation-Max :

225mW Ta

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V