MMBF170LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

ECCN Code :

EAR99

Power Dissipation :

225mW

Factory Lead Time :

8 Weeks

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Radiation Hardening :

No

Surface Mount :

yes

Element Configuration :

Single

FET Type :

N-Channel

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Length :

2.9mm

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Mounting Type :

Surface Mount

Width :

1.3mm

Current Rating :

500mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Terminations :

3

Published :

2004

Threshold Voltage :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

10 ns

Resistance :

5Ohm

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Power Dissipation-Max :

225mW Ta

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

500mA

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

60V

Drain Current-Max (Abs) (ID) :

0.5A

Turn On Delay Time :

10 ns

Nominal Vgs :

3 V

Vgs(th) (Max) @ Id :

3V @ 1mA

Height :

940μm