MMBF2201NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.7V

Nominal Vgs :

1.7 V

Rds On (Max) @ Id, Vgs :

1 Ω @ 300mA, 10V

Element Configuration :

Single

Rise Time :

2.5ns

Resistance :

1Ohm

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Voltage - Rated DC :

20V

ECCN Code :

EAR99

Pin Count :

3

Continuous Drain Current (ID) :

300mA

Published :

2000

Drain to Source Breakdown Voltage :

20V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

REACH SVHC :

No SVHC

Turn-Off Delay Time :

15 ns

Turn On Delay Time :

2.5 ns

Terminal Position :

Dual

Package / Case :

SC-70, SOT-323

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

150mW Ta

Factory Lead Time :

4 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 17 hours ago)

Vgs (Max) :

±20V

Lead Free :

Lead Free

Current Rating :

300mA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

150mW

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

3

Pbfree Code :

yes

Fall Time (Typ) :

2.5 ns

Number of Pins :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 5V

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Radiation Hardening :

No