MMBF170LT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Vgs(th) (Max) @ Id :

3V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Dual

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Drain Current-Max (Abs) (ID) :

0.5A

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G3

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Power Dissipation-Max :

225mW Ta

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-236AB

Drain-source On Resistance-Max :

5Ohm

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

500mA Ta