MMBF170
- Mfr.Part #
- MMBF170
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 18,391
- In Stock :
- 18,391
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Nominal Vgs :
- 2.1 V
- Lead Free :
- Lead Free
- Current Rating :
- 500mA
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 200mA, 10V
- Voltage - Rated DC :
- 60V
- Width :
- 3.05mm
- Length :
- 2.92mm
- Number of Pins :
- 3
- Published :
- 2010
- Weight :
- 30mg
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 500mA
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- SOT-23
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 8 Weeks
- Threshold Voltage :
- 2.1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 40pF @ 10V
- Height :
- 930μm
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Turn-Off Delay Time :
- 10 ns
- Resistance :
- 5Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- SMD/SMT
- Input Capacitance :
- 40pF
- Drain to Source Resistance :
- 5Ohm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 300mW Ta
- Dual Supply Voltage :
- 60V
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation :
- 300mW
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Rds On Max :
- 5 Ω
- Drain to Source Voltage (Vdss) :
- 60V
- Datasheets
- MMBF170

N-Channel Tape & Reel (TR) 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-236-3, SC-59, SOT-23-3
The MMBF170 N-Channel MOSFET is incorperated with Onsemi's patented, high cell density, DMOS technology. The MMBF170 has been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. The MMBF170 is suitable for most applications requiring up to 500 mA DC.
MMBF170 Transistor Features
Low On-Resistance and High Density
Low Gate Threshold Voltage
Low Input Capacitance
High Saturation Current Capability
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant
MMBF170 Transistor Applications
Power MOSFET Gate Drivers
Switching
Servo Motor Control
Amplifiers
Safety Devices
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