MMBF170
- Mfr.Part #
- MMBF170
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 18,391
- In Stock :
- 18,391
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Termination :
- SMD/SMT
- Factory Lead Time :
- 8 Weeks
- Resistance :
- 5Ohm
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 300mW
- Mount :
- Surface Mount
- Length :
- 2.92mm
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Weight :
- 30mg
- Drain to Source Resistance :
- 5Ohm
- Continuous Drain Current (ID) :
- 500mA
- Turn On Delay Time :
- 10 ns
- Power Dissipation-Max :
- 300mW Ta
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 200mA, 10V
- Rds On Max :
- 5 Ω
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Published :
- 2010
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Nominal Vgs :
- 2.1 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 10 ns
- Supplier Device Package :
- SOT-23
- Height :
- 930μm
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 2.1V
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Dual Supply Voltage :
- 60V
- Width :
- 3.05mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 40pF @ 10V
- Input Capacitance :
- 40pF
- Datasheets
- MMBF170

N-Channel Tape & Reel (TR) 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-236-3, SC-59, SOT-23-3
The MMBF170 N-Channel MOSFET is incorperated with Onsemi's patented, high cell density, DMOS technology. The MMBF170 has been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. The MMBF170 is suitable for most applications requiring up to 500 mA DC.
MMBF170 Transistor Features
Low On-Resistance and High Density
Low Gate Threshold Voltage
Low Input Capacitance
High Saturation Current Capability
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant
MMBF170 Transistor Applications
Power MOSFET Gate Drivers
Switching
Servo Motor Control
Amplifiers
Safety Devices
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