MMBF0201NLT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 5V

JESD-609 Code :

e3

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

1 Ω @ 300mA, 10V

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.7V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Rise Time :

2.5ns

Terminal Form :

Gull wing

Fall Time (Typ) :

2.5 ns

Resistance :

1Ohm

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn-Off Delay Time :

15 ns

Mounting Type :

Surface Mount

Nominal Vgs :

1.7 V

Continuous Drain Current (ID) :

300mA

Voltage - Rated DC :

20V

Current Rating :

300mA

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Power Dissipation-Max :

225mW Ta

Number of Terminations :

3

Turn On Delay Time :

2.5 ns

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Surface Mount :

yes

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

62V

Number of Pins :

3

Transistor Application :

SWITCHING

Terminal Position :

Dual

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Published :

2006

Power Dissipation :

225mW