MMBFJ113

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Length :

2.92mm

Transistor Element Material :

SILICON

Current - Drain (Idss) @ Vds (Vgs=0) :

2mA @ 15V

Height :

1.2mm

Max Power Dissipation :

350mW

Terminal Position :

Dual

Weight :

30mg

Terminal Form :

Gull wing

Resistance - RDS(On) :

100Ohm

Operating Mode :

Depletion Mode

Breakdown Voltage :

-35V

Current Rating :

2mA

Feedback Cap-Max (Crss) :

5 pF

Drain to Source Voltage (Vdss) :

35V

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Contact Plating :

Tin

Width :

1.3mm

Factory Lead Time :

42 Weeks

REACH SVHC :

No SVHC

Drain to Source Resistance :

100Ohm

Number of Elements :

1

Pbfree Code :

yes

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Voltage - Cutoff (VGS off) @ Id :

500mV @ 1μA

JESD-609 Code :

e3

Transistor Application :

SWITCHING

FET Technology :

JUNCTION

Base Part Number :

MBFJ113

Number of Pins :

3

Number of Channels :

1

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

2mA

ECCN Code :

EAR99

Power Dissipation :

350mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

-35V

Number of Terminations :

3

Voltage - Rated DC :

35V