MMBFJ113

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Width :

1.3mm

Element Configuration :

Single

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain to Source Voltage (Vdss) :

35V

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Voltage - Rated DC :

35V

Resistance - RDS(On) :

100Ohm

Radiation Hardening :

No

Continuous Drain Current (ID) :

2mA

Lead Free :

Lead Free

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

5 pF

Power Dissipation :

350mW

Base Part Number :

MBFJ113

Terminal Position :

Dual

Max Power Dissipation :

350mW

Breakdown Voltage :

-35V

Current - Drain (Idss) @ Vds (Vgs=0) :

2mA @ 15V

Contact Plating :

Tin

Number of Channels :

1

Number of Pins :

3

Height :

1.2mm

Packaging :

Tape and Reel (TR)

Drain to Source Resistance :

100Ohm

FET Type :

N-Channel

Published :

2000

Number of Elements :

1

FET Technology :

JUNCTION

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

42 Weeks

Gate to Source Voltage (Vgs) :

-35V

Number of Terminations :

3

Terminal Form :

Gull wing

Current Rating :

2mA

Operating Mode :

Depletion Mode

Pbfree Code :

yes

Mounting Type :

Surface Mount

Voltage - Cutoff (VGS off) @ Id :

500mV @ 1μA

Mount :

Surface Mount

Length :

2.92mm

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Weight :

30mg

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant