MMBFJ110

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Mount :

Surface Mount

Resistance - RDS(On) :

18ohm

Drain to Source Voltage (Vdss) :

25V

JESD-609 Code :

e3

Element Configuration :

Single

Height :

940μm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

460mW

Continuous Drain Current (ID) :

10mA

Factory Lead Time :

21 Weeks

Resistance :

18ohm

FET Type :

N-Channel

Weight :

30mg

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Base Part Number :

MBFJ110

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Power Dissipation :

460mW

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

18ohm

Number of Elements :

1

Current - Drain (Idss) @ Vds (Vgs=0) :

10mA @ 15V

Length :

2.92mm

Gate to Source Voltage (Vgs) :

-25V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

HTS Code :

8541.21.00.95

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Voltage - Cutoff (VGS off) @ Id :

4V @ 10nA

Number of Terminations :

3

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pbfree Code :

yes

Lead Free :

Lead Free

Published :

2008

Transistor Element Material :

SILICON

Width :

1.4mm