MMBFJ108

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Power Dissipation :

350mW

ECCN Code :

EAR99

Weight :

30mg

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

No SVHC

Voltage - Rated DC :

25V

Base Part Number :

MBFJ108

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

-25V

RoHS Status :

ROHS3 Compliant

Current Rating :

80mA

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Breakdown Voltage :

-25V

Number of Terminations :

3

Max Power Dissipation :

350mW

FET Type :

N-Channel

Number of Pins :

3

Max Junction Temperature (Tj) :

150°C

Drain to Source Voltage (Vdss) :

25V

Terminal Form :

Gull wing

Operating Mode :

Depletion Mode

Terminal Position :

Dual

Voltage - Cutoff (VGS off) @ Id :

3V @ 10nA

Pbfree Code :

yes

Height :

1.22mm

Resistance - RDS(On) :

8Ohm

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Drain (Idss) @ Vds (Vgs=0) :

80mA @ 15V

Factory Lead Time :

24 Weeks

Continuous Drain Current (ID) :

80mA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Element Configuration :

Single

Number of Elements :

1

Packaging :

Tape and Reel (TR)

FET Technology :

JUNCTION

Radiation Hardening :

No

Drain to Source Resistance :

8Ohm

Transistor Element Material :

SILICON

JESD-609 Code :

e3