MMBFJ108

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Max Power Dissipation :

350mW

Number of Elements :

1

Transistor Element Material :

SILICON

Element Configuration :

Single

Factory Lead Time :

24 Weeks

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

80mA

FET Type :

N-Channel

REACH SVHC :

No SVHC

Voltage - Rated DC :

25V

Power Dissipation :

350mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Resistance - RDS(On) :

8Ohm

Voltage - Cutoff (VGS off) @ Id :

3V @ 10nA

Operating Mode :

Depletion Mode

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Current - Drain (Idss) @ Vds (Vgs=0) :

80mA @ 15V

Current Rating :

80mA

Drain to Source Voltage (Vdss) :

25V

RoHS Status :

ROHS3 Compliant

Breakdown Voltage :

-25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

JUNCTION

Number of Terminations :

3

Published :

2008

Number of Pins :

3

Radiation Hardening :

No

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

Drain to Source Resistance :

8Ohm

Weight :

30mg

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

-25V

Height :

1.22mm

Base Part Number :

MBFJ108

ECCN Code :

EAR99