MMBF5457LT1G
- Mfr.Part #
- MMBF5457LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- JFET N-CH 25V 0.225W SOT23
- Stock
- 12,442
- In Stock :
- 12,442
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - JFETs
- Continuous Drain Current (ID) :
- 5mA
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 25V
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 25V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 7pF @ 15V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Voltage - Cutoff (VGS off) @ Id :
- 500mV @ 10nA
- FET Technology :
- JUNCTION
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 1mA @ 15V
- Max Power Dissipation :
- 225mW
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 200mW
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Published :
- 2005
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Operating Mode :
- Depletion Mode
- Gate to Source Voltage (Vgs) :
- 25V
- Base Part Number :
- MBF5457
- Current Rating :
- 5mA
- Datasheets
- MMBF5457LT1G

MMBF5457LT1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at
MMBF5457LT1G Description
MMBF5457LT1G JFET is easily used in a variety of electronic circuits, from amplifiers to switching circuits. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).
MMBF5457LT1G Features
N-channel JFET
High input impedance
Voltage-controlled device
Low noise
MMBF5457LT1G Applications
Amplifiers
Switch circuits
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