MJL21196G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

No

Current Rating :

16A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Length :

20.3mm

Number of Terminations :

3

Published :

2005

Pin Count :

3

Operating Temperature :

-65°C~150°C TJ

Contact Plating :

Tin

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 8A 5V

REACH SVHC :

No SVHC

Polarity/Channel Type :

NPN

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

100μA

Transistor Type :

NPN

Frequency :

4MHz

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

Number of Elements :

1

Pbfree Code :

yes

hFE Min :

25

Emitter Base Voltage (VEBO) :

5V

Weight :

4.535924g

Collector Emitter Saturation Voltage :

1.4V

Max Power Dissipation :

200W

Width :

5.3mm

Package / Case :

TO-264-3, TO-264AA

Collector Emitter Voltage (VCEO) :

250V

Packaging :

Tube

Element Configuration :

Single

Voltage - Rated DC :

250V

Collector Base Voltage (VCBO) :

400V

Collector Emitter Breakdown Voltage :

250V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gain Bandwidth Product :

4MHz

Max Collector Current :

16A

Peak Reflow Temperature (Cel) :

260

Height :

26.4mm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Power Dissipation :

200W

ECCN Code :

EAR99

Transition Frequency :

4MHz

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

2 Weeks