MJL21196

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

250V

Collector Base Voltage (VCBO) :

400V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Transition Frequency :

4MHz

Gain Bandwidth Product :

4MHz

Transistor Type :

NPN

Weight :

4.535924g

Power Dissipation :

200W

Max Power Dissipation :

200W

Pbfree Code :

yes

Length :

20.3mm

Frequency :

4MHz

Radiation Hardening :

No

Published :

2005

Transistor Application :

AMPLIFIER

Pin Count :

3

Height :

26.4mm

Vce Saturation (Max) @ Ib, Ic :

4V @ 3.2A, 16A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.3mm

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

250V

Current Rating :

16A

hFE Min :

25

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

100μA

Surface Mount :

No

Polarity/Channel Type :

NPN

Number of Pins :

3

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

Packaging :

Tube

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

1.4V

Number of Terminations :

3

Voltage - Rated DC :

250V

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Package / Case :

TO-264-3, TO-264AA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 8A 5V

REACH SVHC :

No SVHC

Max Collector Current :

16A