MJL21195G
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- Mfr.Part #
- MJL21195G
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS PNP 250V 16A TO264
- Stock
- 581
- In Stock ：
- 581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 16A
- Voltage - Rated DC :
- -250V
- Transition Frequency :
- 4MHz
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- Collector Emitter Voltage (VCEO) :
- 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 8A 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 26.4mm
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Max Power Dissipation :
- 200W
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Published :
- 2005
- Length :
- 20.3mm
- Gain Bandwidth Product :
- 4MHz
- Element Configuration :
- Single
- hFE Min :
- 25
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Base Voltage (VCBO) :
- 400V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 250V
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Power Dissipation :
- 200W
- Frequency :
- 4MHz
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 4V
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Package / Case :
- TO-264-3, TO-264AA
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Current Rating :
- -16A
- Width :
- 5.3mm
- Datasheets
- MJL21195G
PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-264-3, TO-264AA Tube Through Hole
MJL21195G Overview
In this device, the DC current gain is 25 @ 8A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 3.2A, 16A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -16A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 16A volts at Single BJT transistors maximum.
MJL21195G Features
the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz
MJL21195G Applications
There are a lot of ON Semiconductor
MJL21195G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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