MJL21195G
- Mfr.Part #
- MJL21195G
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS PNP 250V 16A TO264
- Stock
- 581
- In Stock :
- 581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 250V
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Pins :
- 3
- Height :
- 26.4mm
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 4MHz
- Current Rating :
- -16A
- Collector Emitter Voltage (VCEO) :
- 250V
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 400V
- Current - Collector Cutoff (Max) :
- 100μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 4V
- Max Collector Current :
- 16A
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -250V
- Surface Mount :
- No
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 8A 5V
- Power Dissipation :
- 200W
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 4MHz
- hFE Min :
- 25
- Published :
- 2005
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 4MHz
- Max Power Dissipation :
- 200W
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Length :
- 20.3mm
- Number of Elements :
- 1
- Width :
- 5.3mm
- Packaging :
- Tube
- Datasheets
- MJL21195G

PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-264-3, TO-264AA Tube Through Hole
MJL21195G Overview
In this device, the DC current gain is 25 @ 8A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 3.2A, 16A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -16A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 16A volts at Single BJT transistors maximum.
MJL21195G Features
the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz
MJL21195G Applications
There are a lot of ON Semiconductor
MJL21195G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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