MJL21193G
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- Mfr.Part #
- MJL21193G
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS PNP 250V 16A TO264
- Stock
- 12,316
- In Stock ：
- 12,316
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Height :
- 29mm
- Max Collector Current :
- 16A
- Weight :
- 4.535924g
- Width :
- 5.3mm
- Gain Bandwidth Product :
- 4MHz
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 250V
- Collector Base Voltage (VCBO) :
- 400V
- Transistor Element Material :
- SILICON
- Published :
- 1995
- Max Power Dissipation :
- 200W
- Transition Frequency :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 8A 5V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 20.3mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Factory Lead Time :
- 22 Weeks
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation :
- 200W
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1.4V
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- Isolated
- hFE Min :
- 25
- Current - Collector Cutoff (Max) :
- 100μA
- Element Configuration :
- Single
- Voltage - Rated DC :
- -250V
- Frequency :
- 4MHz
- Current Rating :
- -16A
- Number of Terminations :
- 3
- Datasheets
- MJL21193G
PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-264-3, TO-264AA Tube Through Hole
MJL21193G Overview
In this device, the DC current gain is 25 @ 8A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 3.2A, 16A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -16A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 16A volts at Single BJT transistors maximum.
MJL21193G Features
the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz
MJL21193G Applications
There are a lot of ON Semiconductor
MJL21193G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MJL21193 | onsemi | 49,368 | TRANS PNP 250V 16A TO264 |
| MJL21194 | onsemi | 1,872 | TRANS NPN 250V 16A TO264 |
| MJL21194G | onsemi | 3,553 | TRANS NPN 250V 16A TO264 |
| MJL21195 | onsemi | 5,910 | TRANS PNP 250V 16A TO264 |
| MJL21195G | onsemi | 581 | TRANS PNP 250V 16A TO264 |
| MJL21196 | onsemi | 16 | TRANS NPN 250V 16A TO264 |
| MJL21196G | onsemi | 40,125 | TRANS NPN 250V 16A TO264 |
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