MJF122G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

10μA

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

5A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

hFE Min :

1000

Collector Emitter Saturation Voltage :

2V

Additional Feature :

UL RECOGNIZED

Polarity :

NPN

Weight :

2.299997g

Transistor Type :

NPN - Darlington

Transistor Application :

SWITCHING

Number of Pins :

3

Number of Elements :

1

Surface Mount :

No

JESD-609 Code :

e3

Width :

4.9mm

Max Power Dissipation :

30W

Collector Emitter Breakdown Voltage :

100V

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Voltage - Rated DC :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 3A 3V

Case Connection :

Isolated

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 20mA, 5A

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

Current Rating :

5A

Power Dissipation :

2W

Lead Free :

Lead Free

Mounting Type :

Through Hole

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Height :

9.24mm

Collector Emitter Voltage (VCEO) :

100V

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Collector Current :

5A

Published :

2004

RoHS Status :

ROHS3 Compliant

Length :

10.63mm