MJF122G
- Mfr.Part #
- MJF122G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220FP
- Stock
- 2,290
- In Stock :
- 2,290
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- Isolated
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 30W
- Voltage - Rated DC :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 20mA, 5A
- hFE Min :
- 1000
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 5A
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2004
- Width :
- 4.9mm
- Max Collector Current :
- 5A
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- Height :
- 9.24mm
- Additional Feature :
- UL RECOGNIZED
- Current Rating :
- 5A
- Element Configuration :
- Single
- Packaging :
- Tube
- Pbfree Code :
- yes
- Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 3V
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Surface Mount :
- No
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 2.299997g
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 10.63mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- MJF122G

NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
MJF122G Overview
DC current gain in this device equals 2000 @ 3A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 20mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.In extreme cases, the collector current can be as low as 5A volts.
MJF122G Features
the DC current gain for this device is 2000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.5V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
MJF122G Applications
There are a lot of ON Semiconductor
MJF122G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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