MJF18008G
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- Mfr.Part #
- MJF18008G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 450V 8A TO220FP
- Stock
- 8,586
- In Stock ：
- 8,586
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 450V
- Surface Mount :
- No
- hFE Min :
- 14
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Length :
- 10.63mm
- Series :
- SWITCHMODE™
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 13MHz
- Transition Frequency :
- 13MHz
- Additional Feature :
- UL RECOGNIZED
- Collector Emitter Voltage (VCEO) :
- 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 1A 5V
- Current Rating :
- 8A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 450V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 900mA, 4.5V
- Emitter Base Voltage (VEBO) :
- 9V
- Published :
- 2006
- Lead Free :
- Lead Free
- Frequency :
- 13MHz
- Case Connection :
- Isolated
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power - Max :
- 45W
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 125W
- Collector Base Voltage (VCBO) :
- 1kV
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 300mV
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Through Hole
- Width :
- 4.9mm
- Max Collector Current :
- 8A
- Height :
- 16.12mm
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Datasheets
- MJF18008G
MJF18008G Documents
NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF18008G Overview
This device has a DC current gain of 14 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 700mV @ 900mA, 4.5V means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 13MHz.A maximum collector current of 8A volts is possible.
MJF18008G Features
the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz
MJF18008G Applications
There are a lot of ON Semiconductor
MJF18008G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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