MJF15030
- Mfr.Part #
- MJF15030
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 150V 8A TO220FP
- Stock
- 17,048
- In Stock :
- 17,048
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 30MHz
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 20
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 150V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Collector Emitter Voltage (VCEO) :
- 150V
- Weight :
- 4.535924g
- Power Dissipation :
- 2W
- Case Connection :
- Isolated
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 10μA
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Length :
- 10.63mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Frequency :
- 30MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Additional Feature :
- UL RECOGNIZED
- Max Collector Current :
- 8A
- Published :
- 2000
- Transition Frequency :
- 30MHz
- Width :
- 4.9mm
- Height :
- 9.24mm
- Collector Emitter Breakdown Voltage :
- 150V
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 8A
- Element Configuration :
- Single
- Datasheets
- MJF15030

NPN -65°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF15030G Overview
In this device, the DC current gain is 20 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).30MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.
MJF15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJF15030G Applications
There are a lot of ON Semiconductor
MJF15030G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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