MJF122
- Mfr.Part #
- MJF122
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220FP
- Stock
- 15,942
- In Stock :
- 15,942
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 2W
- Width :
- 4.9mm
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 20mA, 5A
- Max Collector Current :
- 5A
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Weight :
- 2.299997g
- Length :
- 10.63mm
- Polarity :
- NPN
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 3V
- Surface Mount :
- No
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tube
- Case Connection :
- Isolated
- Voltage - Rated DC :
- 100V
- hFE Min :
- 1000
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 10μA
- Published :
- 2004
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Saturation Voltage :
- 2V
- Additional Feature :
- UL RECOGNIZED
- Collector Emitter Voltage (VCEO) :
- 100V
- Current Rating :
- 5A
- Package / Case :
- TO-220-3 Full Pack
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 9.24mm
- Emitter Base Voltage (VEBO) :
- 5V
- Continuous Collector Current :
- 5A
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 30W
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Datasheets
- MJF122

NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
MJF122G Overview
DC current gain in this device equals 2000 @ 3A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 20mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.In extreme cases, the collector current can be as low as 5A volts.
MJF122G Features
the DC current gain for this device is 2000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.5V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
MJF122G Applications
There are a lot of ON Semiconductor
MJF122G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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