MJD5731T4
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- Mfr.Part #
- MJD5731T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 350V 1A DPAK
- Stock
- 28,966
- In Stock ：
- 28,966
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -350V
- Frequency :
- 10MHz
- Collector Base Voltage (VCBO) :
- 5V
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- 1V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 350V
- Current - Collector Cutoff (Max) :
- 100μA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MJD5731
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 350V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 350V
- Power Dissipation :
- 1.56W
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 6.35mm
- Transition Frequency :
- 10MHz
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 10MHz
- Packaging :
- Tape and Reel (TR)
- Published :
- 2005
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.56W
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Weight :
- 4.535924g
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 6.35mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Width :
- 6.35mm
- Radiation Hardening :
- No
- hFE Min :
- 30
- Current Rating :
- -1A
- Surface Mount :
- yes
- Datasheets
- MJD5731T4
PNP -55°C~150°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD5731T4G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MJD5731T4G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 10MHz
MJD5731T4G Applications
There are a lot of ON Semiconductor
MJD5731T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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