MJD50TF
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- Mfr.Part #
- MJD50TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A DPAK
- Stock
- 1,028
- In Stock ：
- 1,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 260.37mg
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Max Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 500V
- Current - Collector Cutoff (Max) :
- 200μA
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Base Part Number :
- MJD50
- Gain Bandwidth Product :
- 10MHz
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- hFE Min :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.56W
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 10MHz
- Power Dissipation :
- 1.56W
- Published :
- 2012
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- High Reliability
- Lifecycle Status :
- LIFETIME (Last Updated: 6 days ago)
- Length :
- 6.73mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Max Breakdown Voltage :
- 400V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400V
- Height :
- 2.38mm
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Width :
- 6.22mm
- Collector Emitter Breakdown Voltage :
- 400V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Transition Frequency :
- 10MHz
- Voltage - Rated DC :
- 400V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current Rating :
- 1A
- ECCN Code :
- EAR99
- Datasheets
- MJD50TF
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NPN 150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD50TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 300mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 10MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1A volts.
MJD50TF Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50TF Applications
There are a lot of ON Semiconductor
MJD50TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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