MJD50G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Voltage - Rated DC :

400V

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Pin Count :

3

Collector Base Voltage (VCBO) :

500V

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Element Configuration :

Single

Pbfree Code :

yes

Width :

6.22mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

10MHz

Number of Terminations :

2

REACH SVHC :

No SVHC

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Published :

2006

Length :

6.73mm

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Max Power Dissipation :

1.56W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Collector Emitter Voltage (VCEO) :

400V

Collector Emitter Breakdown Voltage :

400V

Current - Collector Cutoff (Max) :

200μA

Terminal Form :

Gull wing

Operating Temperature :

-65°C~150°C TJ

Max Collector Current :

1A

Radiation Hardening :

No

Contact Plating :

Tin

Frequency :

10MHz

hFE Min :

30

Current Rating :

1A

Collector Emitter Saturation Voltage :

1V

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Height :

2.38mm

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.56W

Base Part Number :

MJD50

Transistor Type :

NPN

Gain Bandwidth Product :

10MHz