MJD50
- Mfr.Part #
- MJD50
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A DPAK
- Stock
- 28,618
- In Stock :
- 28,618
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 1V
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Gain Bandwidth Product :
- 10MHz
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- 240
- Lead Free :
- Contains Lead
- Max Power Dissipation :
- 1.56W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 200μA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Current Rating :
- 1A
- hFE Min :
- 30
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Voltage - Rated DC :
- 400V
- Pbfree Code :
- No
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Published :
- 2009
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- MJD50
- Surface Mount :
- yes
- JESD-609 Code :
- e0
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 500V
- Transition Frequency :
- 10MHz
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.95
- Datasheets
- MJD50

NPN -65°C~150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD50 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
MJD50 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD50 Applications
There are a lot of ON Semiconductor
MJD50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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