MJ802G

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Mfr.Part #
MJ802G
Manufacturer
onsemi
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS NPN 90V 30A TO204
Stock
12
In Stock :
12

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
30A
Collector Emitter Voltage (VCEO) :
90V
Length :
39.37mm
Transistor Application :
AMPLIFIER
Terminal Form :
PIN/PEG
Voltage - Rated DC :
90V
Pin Count :
2
Vce Saturation (Max) @ Ib, Ic :
800mV @ 750mA, 7.5A
Package / Case :
TO-204AA, TO-3
JESD-609 Code :
e3
Number of Terminations :
2
Transistor Element Material :
SILICON
Base Part Number :
MJ802
Peak Reflow Temperature (Cel) :
260
Number of Pins :
2
Current Rating :
30A
Collector Emitter Saturation Voltage :
800mV
Terminal Position :
BOTTOM
Collector Base Voltage (VCBO) :
100V
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 7.5A 2V
ECCN Code :
EAR99
Transition Frequency :
2MHz
Time@Peak Reflow Temperature-Max (s) :
40
Weight :
4.535924g
Power Dissipation :
200W
Current - Collector Cutoff (Max) :
1mA ICBO
Polarity/Channel Type :
NPN
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Width :
26.67mm
Max Power Dissipation :
200W
Height :
8.51mm
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Element Configuration :
Single
Gain Bandwidth Product :
2MHz
Frequency :
2MHz
Number of Elements :
1
Case Connection :
COLLECTOR
Packaging :
Tray
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
4V
Radiation Hardening :
No
hFE Min :
25
Pbfree Code :
yes
Factory Lead Time :
2 Weeks
Published :
2000
Collector Emitter Breakdown Voltage :
90V
Transistor Type :
NPN
Operating Temperature :
-65°C~200°C TJ
Datasheets
MJ802G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJ802G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-204AA, TO-3, Number of Terminations:2, Base Part Number:MJ802, Number of Pins:2, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, MJ802G pinout, MJ802G datasheet PDF, MJ802G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJ802G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJ802G


NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole

MJ802G Overview


In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.

MJ802G Features


the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz


MJ802G Applications


There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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