MJ802G
- Mfr.Part #
- MJ802G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO204
- Stock
- 12
- In Stock :
- 12
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 30A
- Collector Emitter Voltage (VCEO) :
- 90V
- Length :
- 39.37mm
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- PIN/PEG
- Voltage - Rated DC :
- 90V
- Pin Count :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Package / Case :
- TO-204AA, TO-3
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Base Part Number :
- MJ802
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 2
- Current Rating :
- 30A
- Collector Emitter Saturation Voltage :
- 800mV
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- ECCN Code :
- EAR99
- Transition Frequency :
- 2MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- Power Dissipation :
- 200W
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Width :
- 26.67mm
- Max Power Dissipation :
- 200W
- Height :
- 8.51mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 2MHz
- Frequency :
- 2MHz
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Packaging :
- Tray
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 4V
- Radiation Hardening :
- No
- hFE Min :
- 25
- Pbfree Code :
- yes
- Factory Lead Time :
- 2 Weeks
- Published :
- 2000
- Collector Emitter Breakdown Voltage :
- 90V
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- MJ802G

NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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