MJ802G
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- Mfr.Part #
- MJ802G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO204
- Stock
- 12
- In Stock ：
- 12
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 2MHz
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -65°C~200°C TJ
- Voltage - Rated DC :
- 90V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Packaging :
- Tray
- hFE Min :
- 25
- Gain Bandwidth Product :
- 2MHz
- Pin Count :
- 2
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 2MHz
- Package / Case :
- TO-204AA, TO-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 90V
- Width :
- 26.67mm
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Type :
- NPN
- Published :
- 2000
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MJ802
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 200W
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200W
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 4V
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Transistor Application :
- AMPLIFIER
- Length :
- 39.37mm
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Current Rating :
- 30A
- Terminal Position :
- BOTTOM
- Number of Pins :
- 2
- Collector Emitter Voltage (VCEO) :
- 90V
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Height :
- 8.51mm
- Max Collector Current :
- 30A
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- PIN/PEG
- Collector Base Voltage (VCBO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 800mV
- Datasheets
- MJ802G
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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