MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO3
- Stock
- 32,894
- In Stock ：
- 32,894
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2000
- Height :
- 8.51mm
- Operating Temperature :
- -65°C~200°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Transition Frequency :
- 2MHz
- Width :
- 26.67mm
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 2MHz
- Packaging :
- Tray
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- hFE Min :
- 25
- JESD-609 Code :
- e3
- Length :
- 39.37mm
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 90V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Collector Emitter Voltage (VCEO) :
- 90V
- Number of Terminations :
- 2
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 200W
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 100V
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Terminal Form :
- PIN/PEG
- Power Dissipation :
- 200W
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 30A
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 2
- Base Part Number :
- MJ802
- Radiation Hardening :
- No
- Number of Pins :
- 2
- Voltage - Rated DC :
- 90V
- Frequency :
- 2MHz
- Package / Case :
- TO-204AA, TO-3
- Current Rating :
- 30A
- Emitter Base Voltage (VEBO) :
- 4V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 800mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Datasheets
- MJ802
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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