MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO3
- Stock
- 32,894
- In Stock ：
- 32,894
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 4V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200W
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 30A
- Collector Emitter Saturation Voltage :
- 800mV
- ECCN Code :
- EAR99
- Height :
- 8.51mm
- Collector Emitter Voltage (VCEO) :
- 90V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Gain Bandwidth Product :
- 2MHz
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Packaging :
- Tray
- Width :
- 26.67mm
- JESD-609 Code :
- e3
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 2MHz
- Length :
- 39.37mm
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Base Part Number :
- MJ802
- Current Rating :
- 30A
- Operating Temperature :
- -65°C~200°C TJ
- Number of Terminations :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 200W
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-204AA, TO-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 90V
- Published :
- 2000
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 90V
- Pin Count :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- hFE Min :
- 25
- Frequency :
- 2MHz
- Case Connection :
- COLLECTOR
- Terminal Form :
- PIN/PEG
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Number of Pins :
- 2
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Datasheets
- MJ802
MJ802 Documents
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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