MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO3
- Stock
- 32,894
- In Stock ：
- 32,894
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Base Part Number :
- MJ802
- Emitter Base Voltage (VEBO) :
- 4V
- Packaging :
- Tray
- Number of Elements :
- 1
- Max Collector Current :
- 30A
- Gain Bandwidth Product :
- 2MHz
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 25
- Weight :
- 4.535924g
- Width :
- 26.67mm
- Package / Case :
- TO-204AA, TO-3
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2000
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Power Dissipation :
- 200W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Frequency :
- 2MHz
- Element Configuration :
- Single
- Height :
- 8.51mm
- Voltage - Rated DC :
- 90V
- Max Power Dissipation :
- 200W
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Pin Count :
- 2
- Current Rating :
- 30A
- Lead Free :
- Lead Free
- Number of Pins :
- 2
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 90V
- Length :
- 39.37mm
- Collector Emitter Breakdown Voltage :
- 90V
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Terminal Form :
- PIN/PEG
- Transition Frequency :
- 2MHz
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Collector Emitter Saturation Voltage :
- 800mV
- Datasheets
- MJ802
MJ802 Documents
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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