MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO3
- Stock
- 32,894
- In Stock ：
- 32,894
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-204AA, TO-3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 8.51mm
- Operating Temperature :
- -65°C~200°C TJ
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 90V
- Frequency :
- 2MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 4V
- Gain Bandwidth Product :
- 2MHz
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Max Collector Current :
- 30A
- Element Configuration :
- Single
- Max Power Dissipation :
- 200W
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 90V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 39.37mm
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 800mV
- Mounting Type :
- Through Hole
- Published :
- 2000
- Width :
- 26.67mm
- Power Dissipation :
- 200W
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 2MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- hFE Min :
- 25
- Collector Emitter Breakdown Voltage :
- 90V
- Collector Base Voltage (VCBO) :
- 100V
- ECCN Code :
- EAR99
- Pin Count :
- 2
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Terminal Form :
- PIN/PEG
- Base Part Number :
- MJ802
- Polarity/Channel Type :
- NPN
- Packaging :
- Tray
- REACH SVHC :
- No SVHC
- Number of Pins :
- 2
- Current Rating :
- 30A
- Datasheets
- MJ802
MJ802 Documents
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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