MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PWR NPN 90V 30A TO3
- Stock
- 35,050
- In Stock ：
- 35,050
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 8.51mm
- Max Collector Current :
- 30A
- Width :
- 26.67mm
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- hFE Min :
- 25
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Terminal Form :
- PIN/PEG
- Gain Bandwidth Product :
- 2MHz
- Number of Elements :
- 1
- Frequency :
- 2MHz
- Pbfree Code :
- yes
- Length :
- 39.37mm
- Power Dissipation :
- 200W
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 4V
- Operating Temperature :
- -65°C~200°C TJ
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 90V
- Base Part Number :
- MJ802
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Pin Count :
- 2
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 90V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 2
- Package / Case :
- TO-204AA, TO-3
- Collector Emitter Voltage (VCEO) :
- 90V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Weight :
- 4.535924g
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Published :
- 2000
- Transition Frequency :
- 2MHz
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tray
- Current Rating :
- 30A
- Max Power Dissipation :
- 200W
- Collector Emitter Saturation Voltage :
- 800mV
- Datasheets
- MJ802
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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