MJ802
- Mfr.Part #
- MJ802
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PWR NPN 90V 30A TO3
- Stock
- 35,050
- In Stock :
- 35,050
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 8.51mm
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MJ802
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-204AA, TO-3
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 2MHz
- Collector Base Voltage (VCBO) :
- 100V
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 800mV
- Collector Emitter Voltage (VCEO) :
- 90V
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- Voltage - Rated DC :
- 90V
- Number of Elements :
- 1
- Published :
- 2000
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Breakdown Voltage :
- 90V
- Current Rating :
- 30A
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 2MHz
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 2
- Packaging :
- Tray
- Max Collector Current :
- 30A
- Power Dissipation :
- 200W
- Max Power Dissipation :
- 200W
- Terminal Form :
- PIN/PEG
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Pin Count :
- 2
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 2MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 25
- Surface Mount :
- No
- Number of Pins :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Length :
- 39.37mm
- Factory Lead Time :
- 2 Weeks
- Width :
- 26.67mm
- Datasheets
- MJ802

NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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