MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO204
- Stock
- 26
- In Stock ：
- 26
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4V
- Max Collector Current :
- 30A
- Collector Emitter Breakdown Voltage :
- 90V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Number of Elements :
- 1
- Max Power Dissipation :
- 200W
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Terminal Form :
- PIN/PEG
- Packaging :
- Tray
- Current Rating :
- 30A
- Frequency :
- 2MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 90V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Published :
- 2000
- Weight :
- 4.535924g
- Height :
- 8.51mm
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 2MHz
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Length :
- 39.37mm
- Collector Base Voltage (VCBO) :
- 100V
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 200W
- Base Part Number :
- MJ802
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 2MHz
- Number of Pins :
- 2
- Collector Emitter Saturation Voltage :
- 800mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 2
- Package / Case :
- TO-204AA, TO-3
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Pin Count :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- No
- Voltage - Rated DC :
- 90V
- hFE Min :
- 25
- Width :
- 26.67mm
- Datasheets
- MJ802
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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