MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO204
- Stock
- 26
- In Stock ：
- 26
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Packaging :
- Tray
- Number of Pins :
- 2
- Voltage - Rated DC :
- 90V
- Number of Terminations :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- Package / Case :
- TO-204AA, TO-3
- Gain Bandwidth Product :
- 2MHz
- Collector Emitter Breakdown Voltage :
- 90V
- Published :
- 2000
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Surface Mount :
- No
- Max Collector Current :
- 30A
- Height :
- 8.51mm
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Pin Count :
- 2
- Max Power Dissipation :
- 200W
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 90V
- Case Connection :
- COLLECTOR
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- MJ802
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Transition Frequency :
- 2MHz
- Collector Emitter Saturation Voltage :
- 800mV
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Length :
- 39.37mm
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 25
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Width :
- 26.67mm
- Current Rating :
- 30A
- Terminal Form :
- PIN/PEG
- Polarity/Channel Type :
- NPN
- Frequency :
- 2MHz
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 4V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200W
- Terminal Position :
- BOTTOM
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Datasheets
- MJ802
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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