MJ11033G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

-120V

Number of Pins :

2

Collector Emitter Breakdown Voltage :

120V

Pin Count :

2

JESD-609 Code :

e1

Transistor Type :

PNP - Darlington

Continuous Collector Current :

50A

Current - Collector Cutoff (Max) :

2mA

Transistor Element Material :

SILICON

Published :

2002

Pbfree Code :

yes

Max Collector Current :

50A

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Polarity :

PNP

Current Rating :

50A

Factory Lead Time :

5 Weeks

Number of Terminations :

2

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form :

PIN/PEG

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

120V

Collector Emitter Voltage (VCEO) :

120V

Mounting Type :

Through Hole

Width :

26.67mm

Packaging :

Tray

Package / Case :

TO-204AE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 25A 5V

Case Connection :

COLLECTOR

Height :

8.51mm

Operating Temperature :

-55°C~200°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Number of Elements :

1

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 500mA, 50A

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.5V

Length :

38.86mm

Max Power Dissipation :

300W

Power Dissipation :

300W