MJ11030G
- Mfr.Part #
- MJ11030G
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 90V 50A TO204
- Stock
- 9,420
- In Stock :
- 9,420
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 90V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Number of Pins :
- 2
- ECCN Code :
- EAR99
- Polarity :
- NPN
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 2mA
- Package / Case :
- TO-204AE
- Current Rating :
- 50A
- Pin Count :
- 2
- Case Connection :
- COLLECTOR
- Voltage - Rated DC :
- 90V
- Max Power Dissipation :
- 300W
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 90V
- Element Configuration :
- Single
- Max Collector Current :
- 50A
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2.5V
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Terminal Form :
- PIN/PEG
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Type :
- NPN - Darlington
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 90V
- Packaging :
- Tray
- Datasheets
- MJ11030G

NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11030G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 25A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 50A volts.
MJ11030G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11030G Applications
There are a lot of ON Semiconductor
MJ11030G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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