MJ11030G
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- Mfr.Part #
- MJ11030G
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 90V 50A TO204
- Stock
- 9,420
- In Stock ：
- 9,420
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 300W
- ECCN Code :
- EAR99
- Package / Case :
- TO-204AE
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 90V
- Number of Pins :
- 2
- Max Collector Current :
- 50A
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- Surface Mount :
- No
- Published :
- 2008
- Pin Count :
- 2
- Collector Emitter Breakdown Voltage :
- 90V
- Collector Base Voltage (VCBO) :
- 90V
- Current Rating :
- 50A
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Terminal Form :
- PIN/PEG
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN - Darlington
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2.5V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current - Collector Cutoff (Max) :
- 2mA
- Voltage - Rated DC :
- 90V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tray
- Operating Temperature :
- -55°C~200°C TJ
- Datasheets
- MJ11030G
MJ11030G Documents
NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11030G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 25A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 50A volts.
MJ11030G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11030G Applications
There are a lot of ON Semiconductor
MJ11030G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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