MGB15N40CLT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.9V @ 4V, 25A

Max Power Dissipation :

150W

Element Configuration :

Single

Current - Collector Pulsed (Icm) :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Time :

6000 ns

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Transistor Application :

AUTOMOTIVE IGNITION

Published :

2005

Voltage - Rated DC :

410V

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Voltage-Max :

22V

Pin Count :

3

Test Condition :

300V, 6.5A, 1k Ω

Pbfree Code :

No

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Lead (Sn/Pb)

Mounting Type :

Surface Mount

JESD-609 Code :

e0

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Power Dissipation :

150W

Additional Feature :

VOLTAGE CLAMPING

Input Capacitance :

1nF

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

440V

Qualification Status :

Not Qualified

Turn Off Time-Nom (toff) :

20500 ns

Max Collector Current :

15A

Input Type :

Logic

Number of Pins :

3

Collector Emitter Saturation Voltage :

10V

Collector Emitter Voltage (VCEO) :

2.9V

Lead Free :

Contains Lead

Polarity/Channel Type :

N-Channel

Current Rating :

15A

Gate-Emitter Thr Voltage-Max :

2.1V

Td (on/off) @ 25°C :

-/4μs

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

240