MDS150

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

350W

Collector Emitter Breakdown Voltage :

60V

Mount :

Chassis Mount, Screw

Terminal Position :

Dual

JESD-30 Code :

R-PDFM-F3

Package / Case :

55AW

Number of Elements :

1

Operating Temperature :

200°C TJ

Gain :

10dB

Highest Frequency Band :

L B

Radiation Hardening :

No

Terminal Finish :

TIN LEAD

Packaging :

Bulk

Collector Base Voltage (VCBO) :

55V

Collector Emitter Voltage (VCEO) :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 500mA 5V

Frequency - Transition :

1.03GHz~1.09GHz

Max Power Dissipation :

350W

Mounting Type :

Chassis Mount

Number of Terminations :

3

Case Connection :

Base

ECCN Code :

EAR99

Configuration :

Single

RoHS Status :

RoHS Compliant

Published :

2012

Transistor Type :

NPN

JESD-609 Code :

e0

Max Collector Current :

4A

Polarity/Channel Type :

NPN

Terminal Form :

Flat

Pin Count :

3

Transistor Element Material :

SILICON

Number of Pins :

55

Pbfree Code :

No