MAX2601ESA+

Manufacturer :

Analog Devices, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Continuous Collector Current :

200mA

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Gain :

11.6dB

Pbfree Code :

yes

Noise Figure (dB Typ @ f) :

3.3dB @ 836MHz

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width) Exposed Pad

Operating Temperature :

150°C TJ

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Max Collector Current :

1.2A

Width :

3.99mm

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Number of Pins :

8

Factory Lead Time :

6 Weeks

Current - Collector (Ic) (Max) :

1.2A

Contact Plating :

Tin

Frequency :

1GHz

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 250mA 3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

17V

Time@Peak Reflow Temperature-Max (s) :

30

Emitter Base Voltage (VEBO) :

2.3V

Weight :

540.001716mg

Terminal Position :

Dual

hFE Min :

100

Base Part Number :

MAX2601

Terminal Form :

Gull wing

Lifecycle Status :

Production (Last Updated: 1 month ago)

Height :

1.58mm

Packaging :

Tube

REACH SVHC :

Unknown

Power Dissipation :

6.4W

JESD-609 Code :

e3

ECCN Code :

EAR99

Configuration :

Single

Mount :

Surface Mount

Max Supply Voltage :

3.6V

Number of Elements :

1

Max Power Dissipation :

6.4W

Collector Base Voltage (VCBO) :

15V

Published :

2009

Mounting Type :

Surface Mount

Min Supply Voltage :

3V

Collector Emitter Breakdown Voltage :

15V

Length :

4.98mm