KSD986YSTSSTU

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Mfr.Part #
KSD986YSTSSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 80V 1.5A TO126-3
Stock
23,685
In Stock :
23,685

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Pbfree Code :
yes
Number of Elements :
1
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
1W
Transistor Application :
AMPLIFIER
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Terminal Finish :
MATTE TIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
Current - Collector (Ic) (Max) :
1.5A
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
10μA ICBO
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1mA, 1A
Turn On Time-Max (ton) :
500ns
Operating Temperature :
150°C TJ
Number of Terminations :
3
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
80V
Package / Case :
TO-225AA, TO-126-3
Transistor Type :
NPN - Darlington
Terminal Position :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
8000 @ 1A 2V
Polarity/Channel Type :
NPN
Qualification Status :
COMMERCIAL
Turn Off Time-Max (toff) :
2000ns
Case Connection :
Isolated
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD986YSTSSTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, KSD986YSTSSTU pinout, KSD986YSTSSTU datasheet PDF, KSD986YSTSSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD986YSTSSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD986YSTSSTU


NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

KSD986YSTSSTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8000 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1mA, 1A.Device displays Collector Emitter Breakdown (80V maximal voltage).

KSD986YSTSSTU Features


the DC current gain for this device is 8000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A


KSD986YSTSSTU Applications


There are a lot of Rochester Electronics, LLC
KSD986YSTSSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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