KSD986OS

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Mfr.Part #
KSD986OS
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 80V 1.5A TO126-3
Stock
46,232
In Stock :
46,232

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
1W
Voltage - Collector Emitter Breakdown (Max) :
80V
Current - Collector (Ic) (Max) :
1.5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Transistor Type :
NPN - Darlington
Current - Collector Cutoff (Max) :
10μA ICBO
Operating Temperature :
150°C TJ
Package / Case :
TO-225AA, TO-126-3
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
4000 @ 1A 2V
Packaging :
Bulk
Datasheets
KSD986OS
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD986OS from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, KSD986OS pinout, KSD986OS datasheet PDF, KSD986OS amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD986OS ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD986OS


NPN - Darlington 150°C TJ 10μA ICBO TO-225AA, TO-126-3 Bulk Through Hole

KSD986OS Overview


This device has a DC current gain of 4000 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

KSD986OS Features


the DC current gain for this device is 4000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A


KSD986OS Applications


There are a lot of ON Semiconductor
KSD986OS applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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