KSD985OSTU
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- Mfr.Part #
- KSD985OSTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 1.5A TO126-3
- Stock
- 26,851
- In Stock ：
- 26,851
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-126-3
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4000 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1W
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1.5A
- Transistor Type :
- NPN - Darlington
- Datasheets
- KSD985OSTU
NPN - Darlington 150°C TJ 10μA ICBO TO-225AA, TO-126-3 Tube Through Hole
KSD985OSTU Overview
In this device, the DC current gain is 4000 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1mA, 1A.Product comes in the supplier's device package TO-126-3.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
KSD985OSTU Features
the DC current gain for this device is 4000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the supplier device package of TO-126-3
KSD985OSTU Applications
There are a lot of Rochester Electronics, LLC
KSD985OSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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