KSD986YS

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Mfr.Part #
KSD986YS
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 80V 1.5A TO126-3
Stock
11,020
In Stock :
11,020

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
MATTE TIN
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Pin Count :
3
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Time-Max (ton) :
500ns
Reach Compliance Code :
Unknown
Case Connection :
Isolated
Current - Collector Cutoff (Max) :
10μA ICBO
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Transistor Application :
AMPLIFIER
Voltage - Collector Emitter Breakdown (Max) :
80V
Pbfree Code :
yes
Package / Case :
TO-225AA, TO-126-3
JESD-30 Code :
R-PSFM-T3
Power - Max :
1W
Polarity/Channel Type :
NPN
Current - Collector (Ic) (Max) :
1.5A
Turn Off Time-Max (toff) :
2000ns
Transistor Type :
NPN - Darlington
Surface Mount :
No
Packaging :
Bulk
Mounting Type :
Through Hole
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce :
8000 @ 1A 2V
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1mA, 1A
Terminal Position :
Single
Qualification Status :
COMMERCIAL
Datasheets
KSD986YS
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD986YS from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, KSD986YS pinout, KSD986YS datasheet PDF, KSD986YS amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD986YS ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD986YS


NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

KSD986YS Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8000 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1mA, 1A.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.

KSD986YS Features


the DC current gain for this device is 8000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A


KSD986YS Applications


There are a lot of Rochester Electronics, LLC
KSD986YS applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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