KSD1943TU
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- Mfr.Part #
- KSD1943TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220-3
- Stock
- 3,667
- In Stock ：
- 3,667
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 3A
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 500mA 4V
- Published :
- 2000
- Supplier Device Package :
- TO-220-3
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Power - Max :
- 40W
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 2A
- Datasheets
- KSD1943TU
NPN 150°C TJ 100μA ICBO TO-220-3 Tube Through Hole
KSD1943TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 500mA 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 2A.The product comes in the supplier device package of TO-220-3.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
KSD1943TU Features
the DC current gain for this device is 400 @ 500mA 4V
the vce saturation(Max) is 1V @ 50mA, 2A
the supplier device package of TO-220-3
KSD1943TU Applications
There are a lot of ON Semiconductor
KSD1943TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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