KSD1020GBU
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- Mfr.Part #
- KSD1020GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.7A TO92S
- Stock
- 31,419
- In Stock ：
- 31,419
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSD1020
- Supplier Device Package :
- TO-92S
- Power - Max :
- 350mW
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 700mA
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 70mA, 700mA
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 170MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Datasheets
- KSD1020GBU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Bulk Through Hole
KSD1020GBU Overview
In this device, the DC current gain is 200 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 70mA, 700mA.Product comes in the supplier's device package TO-92S.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
KSD1020GBU Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 400mV @ 70mA, 700mA
the supplier device package of TO-92S
KSD1020GBU Applications
There are a lot of ON Semiconductor
KSD1020GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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