KSD1021YTA
- Mfr.Part #
- KSD1021YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92S
- Stock
- 42,961
- In Stock :
- 42,961
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Base Part Number :
- KSD1021
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Transistor Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Frequency - Transition :
- 130MHz
- Power - Max :
- 350mW
- Supplier Device Package :
- TO-92S
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- KSD1021YTA

NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole
KSD1021YTA Overview
In this device, the DC current gain is 120 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Product comes in the supplier's device package TO-92S.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
KSD1021YTA Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-92S
KSD1021YTA Applications
There are a lot of ON Semiconductor
KSD1021YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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