KSD1021GBU
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- Mfr.Part #
- KSD1021GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92S
- Stock
- 15,802
- In Stock ：
- 15,802
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Base Part Number :
- KSD1021
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Supplier Device Package :
- TO-92S
- Current - Collector (Ic) (Max) :
- 1A
- Transistor Type :
- NPN
- Power - Max :
- 350mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 130MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Datasheets
- KSD1021GBU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Bulk Through Hole
KSD1021GBU Overview
This device has a DC current gain of 200 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92S.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
KSD1021GBU Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-92S
KSD1021GBU Applications
There are a lot of ON Semiconductor
KSD1021GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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