KSD1692YS

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Mfr.Part #
KSD1692YS
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 100V 3A TO126-3
Stock
2,579
In Stock :
2,579

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Saturation Voltage :
1.2V
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 1.5mA, 1.5A
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Max Collector Current :
3A
Continuous Collector Current :
3A
Power Dissipation :
15W
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
10μA ICBO
Packaging :
Bulk
Factory Lead Time :
20 Weeks
Collector Base Voltage (VCBO) :
150V
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Emitter Base Voltage (VEBO) :
8V
Polarity :
NPN
Weight :
761mg
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
4000 @ 1.5A 2V
Lead Free :
Lead Free
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
2000
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Collector Emitter Breakdown Voltage :
100V
Operating Temperature :
150°C TJ
JESD-609 Code :
e3
Transistor Type :
NPN - Darlington
Transistor Element Material :
SILICON
Mount :
Through Hole
Number of Terminations :
3
Current Rating :
3A
Published :
2000
Max Power Dissipation :
1.3W
Voltage - Rated DC :
100V
Collector Emitter Voltage (VCEO) :
100V
Package / Case :
TO-225AA, TO-126-3
Datasheets
KSD1692YS
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD1692YS from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, KSD1692YS pinout, KSD1692YS datasheet PDF, KSD1692YS amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD1692YS ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD1692YS


NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

KSD1692YS Overview


This device has a DC current gain of 4000 @ 1.5A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 1.5mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 3A volts is possible.

KSD1692YS Features


the DC current gain for this device is 4000 @ 1.5A 2V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 1.5mA, 1.5A
the emitter base voltage is kept at 8V
the current rating of this device is 3A


KSD1692YS Applications


There are a lot of ON Semiconductor
KSD1692YS applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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