KSD1691YSTU
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- Mfr.Part #
- KSD1691YSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO126-3
- Stock
- 3,548
- In Stock ：
- 3,548
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 2A 1V
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Weight :
- 761mg
- Number of Pins :
- 3
- Base Part Number :
- KSD1691
- Mounting Type :
- Through Hole
- Max Collector Current :
- 5A
- Max Power Dissipation :
- 1.3W
- Current Rating :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2000
- Factory Lead Time :
- 18 Weeks
- Output Power :
- 1.3W
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 100mV
- Packaging :
- Tube
- Voltage - Rated DC :
- 60V
- Height :
- 11mm
- Power Dissipation :
- 1.3W
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 100
- Length :
- 8mm
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Number of Elements :
- 1
- Width :
- 3.25mm
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Datasheets
- KSD1691YSTU
KSD1691YSTU Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD1691YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 2A 1V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.Collector current can be as low as 5A volts at its maximum.
KSD1691YSTU Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD1691YSTU Applications
There are a lot of ON Semiconductor
KSD1691YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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