KSD1691YSTU
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- Mfr.Part #
- KSD1691YSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO126-3
- Stock
- 3,548
- In Stock ：
- 3,548
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Height :
- 11mm
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.3W
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 2A 1V
- Width :
- 3.25mm
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 18 Weeks
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 5A
- hFE Min :
- 100
- Number of Terminations :
- 3
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Output Power :
- 1.3W
- Current Rating :
- 5A
- Element Configuration :
- Single
- Base Part Number :
- KSD1691
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 1.3W
- Collector Emitter Voltage (VCEO) :
- 60V
- Weight :
- 761mg
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- JESD-609 Code :
- e3
- Length :
- 8mm
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 100mV
- Datasheets
- KSD1691YSTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD1691YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 2A 1V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.Collector current can be as low as 5A volts at its maximum.
KSD1691YSTU Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD1691YSTU Applications
There are a lot of ON Semiconductor
KSD1691YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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