KSD1691YS
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- Mfr.Part #
- KSD1691YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO126-3
- Stock
- 38,083
- In Stock ：
- 38,083
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 45V
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 100mV
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- KSD1691
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Power Dissipation :
- 1.3W
- Published :
- 2000
- Element Configuration :
- Single
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 3MHz
- Weight :
- 761mg
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- Current Rating :
- 5A
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 2A 1V
- Max Collector Current :
- 5A
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Datasheets
- KSD1691YS
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
KSD1691YS Overview
In this device, the DC current gain is 160 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 200mA, 2A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
KSD1691YS Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 3MHz
KSD1691YS Applications
There are a lot of ON Semiconductor
KSD1691YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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