KSD1691OS
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- Mfr.Part #
- KSD1691OS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO126-3
- Stock
- 5,451
- In Stock ：
- 5,451
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Current - Collector (Ic) (Max) :
- 5A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Base Part Number :
- KSD1691
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Power - Max :
- 1.3W
- Package / Case :
- TO-225AA, TO-126-3
- Packaging :
- Bulk
- Datasheets
- KSD1691OS
NPN 150°C TJ 10μA ICBO TO-225AA, TO-126-3 Bulk Through Hole
KSD1691OS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 200mA, 2A.Device displays Collector Emitter Breakdown (60V maximal voltage).
KSD1691OS Features
the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 300mV @ 200mA, 2A
KSD1691OS Applications
There are a lot of ON Semiconductor
KSD1691OS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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