KSD1691GSTU

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Mfr.Part #
KSD1691GSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 60V 5A TO126-3
Stock
1,702
In Stock :
1,702

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
100
Emitter Base Voltage (VEBO) :
7V
Pbfree Code :
yes
Number of Elements :
1
Transistor Type :
NPN
HTS Code :
8541.29.00.95
Polarity/Channel Type :
NPN
Factory Lead Time :
2 Weeks
Collector Emitter Breakdown Voltage :
60V
Collector Base Voltage (VCBO) :
60V
Package / Case :
TO-225AA, TO-126-3
Weight :
761mg
Packaging :
Tube
Transistor Element Material :
SILICON
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
KSD1691
Length :
8mm
Height :
11mm
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Published :
2000
Collector Emitter Saturation Voltage :
300mV
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
60V
Number of Terminations :
3
Max Collector Current :
5A
Vce Saturation (Max) @ Ib, Ic :
300mV @ 200mA, 2A
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Current - Collector Cutoff (Max) :
10μA ICBO
Max Power Dissipation :
1.3W
Power - Max :
1.3W
ECCN Code :
EAR99
Width :
3.25mm
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 1V
Operating Temperature :
150°C TJ
Element Configuration :
Single
Mount :
Through Hole
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD1691GSTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Base Part Number:KSD1691, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, KSD1691GSTU pinout, KSD1691GSTU datasheet PDF, KSD1691GSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD1691GSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD1691GSTU


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

KSD1691GSTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2A 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 5A volts at its maximum.

KSD1691GSTU Features


the DC current gain for this device is 200 @ 2A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V


KSD1691GSTU Applications


There are a lot of ON Semiconductor
KSD1691GSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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