KSD1691GS
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- Mfr.Part #
- KSD1691GS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO126-3
- Stock
- 8,204
- In Stock ：
- 8,204
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Max Breakdown Voltage :
- 60V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e3
- Published :
- 2000
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Voltage - Rated DC :
- 60V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Current Rating :
- 5A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Power Dissipation :
- 1.3W
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 1V
- Transition Frequency :
- 3MHz
- Mount :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Max Collector Current :
- 5A
- Polarity/Channel Type :
- NPN
- Weight :
- 761mg
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Collector Emitter Saturation Voltage :
- 100mV
- Number of Terminations :
- 3
- Power Dissipation :
- 1.3W
- Base Part Number :
- KSD1691
- Datasheets
- KSD1691GS
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
KSD1691GS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 100mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 5A volts.
KSD1691GS Features
the DC current gain for this device is 200 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 3MHz
KSD1691GS Applications
There are a lot of ON Semiconductor
KSD1691GS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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