KSD1616LBU
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- Mfr.Part #
- KSD1616LBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 1A TO92-3
- Stock
- 10,000
- In Stock ：
- 10,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Pbfree Code :
- yes
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- JESD-30 Code :
- O-PBCY-T3
- Power - Max :
- 750mW
- Current - Collector (Ic) (Max) :
- 1A
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Qualification Status :
- COMMERCIAL
- Reach Compliance Code :
- Unknown
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 160MHz
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 160MHz
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Number of Terminations :
- 3
- Datasheets
- KSD1616LBU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD1616LBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 1A.A transition frequency of 160MHz is present in the part.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
KSD1616LBU Features
the DC current gain for this device is 300 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 160MHz
KSD1616LBU Applications
There are a lot of Rochester Electronics, LLC
KSD1616LBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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