KSD1616AYTA
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- Mfr.Part #
- KSD1616AYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 13,473
- In Stock ：
- 13,473
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 135 @ 100mA 2V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Base Part Number :
- KSD1616
- Power Dissipation :
- 750mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Frequency :
- 160MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Width :
- 4.19mm
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 300mV
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current Rating :
- 1A
- Packaging :
- Tape and Box (TB)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 7 Weeks
- Transition Frequency :
- 160MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Height :
- 5.33mm
- Voltage - Rated DC :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 750mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- JESD-609 Code :
- e3
- Weight :
- 240mg
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- hFE Min :
- 135
- Length :
- 5.2mm
- Gain Bandwidth Product :
- 160MHz
- Published :
- 2004
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 120V
- Datasheets
- KSD1616AYTA
KSD1616AYTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD1616AYTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 135 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
KSD1616AYTA Features
the DC current gain for this device is 135 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AYTA Applications
There are a lot of ON Semiconductor
KSD1616AYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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