KSD1616AYTA
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- Mfr.Part #
- KSD1616AYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 13,473
- In Stock ：
- 13,473
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.19mm
- Pbfree Code :
- yes
- Transition Frequency :
- 160MHz
- Collector Base Voltage (VCBO) :
- 120V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Saturation Voltage :
- 300mV
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 7 Weeks
- Terminal Position :
- BOTTOM
- Base Part Number :
- KSD1616
- Collector Emitter Breakdown Voltage :
- 60V
- Current Rating :
- 1A
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Length :
- 5.2mm
- Max Breakdown Voltage :
- 60V
- Power Dissipation :
- 750mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Weight :
- 240mg
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 135 @ 100mA 2V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 750mW
- Frequency :
- 160MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- hFE Min :
- 135
- Packaging :
- Tape and Box (TB)
- Height :
- 5.33mm
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Published :
- 2004
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 60V
- Gain Bandwidth Product :
- 160MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSD1616AYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD1616AYTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 135 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
KSD1616AYTA Features
the DC current gain for this device is 135 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AYTA Applications
There are a lot of ON Semiconductor
KSD1616AYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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